SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced innovative strategies for memory and storage technology aimed at enhancing artificial intelligence infrastructure. These plans were announced at the 2026 OCP Global Summit in San Jose, California, from October 12 to 15. The company’s roadmap emphasizes high-performance memory, expanding memory capacity through Compute Express Link, and next-generation solid-state drives. Additionally, Samsung will collaborate with AMD on a joint CXL demonstration. These initiatives aim to address current AI server capacity limitations.
Samsung outlined its approach around three core objectives: speed, scalability of memory, and data persistence. For increasing speed, the company showcased customized high-bandwidth memory along with HBM5, the eighth iteration of this technology. To enhance scalability, Samsung highlighted CXL technology as a means to augment memory capacity beyond what is installed in individual servers. For data persistence, the firm introduced next-generation SSD-based storage and management solutions. It also presented storage software designed to improve data processing efficiency within AI systems.
According to Samsung, the rising deployment of AI agents is increasing the demand for more memory during inference. Larger models generate more data while producing responses, and this data must remain accessible to processors. Traditional systems restrict the amount of memory each processor can access. Samsung demonstrated CXL technology as an effective method to overcome these constraints. The company also showcased key-value cache optimization, enabling AI models to reuse data they have already processed instead of repeating computations.
Partnership with AMD Expands to CXL Memory Expansion Solutions
A joint demonstration between Samsung and AMD will showcase a CXL-based solution that increases memory capacity in AI systems. This technology allows processors to share memory resources rather than relying solely on local server memory. Samsung reports that engineers have validated this solution in real system environments. The demonstration is based on a memorandum of understanding signed in March 2026 by both companies, focusing on next-generation AI memory and computing. On October 7, AMD CEO Lisa Su visited Korea and met with Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling was also a highlight of Samsung’s showcase. The company demonstrated CMM-D, a CXL-based DRAM module that connects multiple memory units into a shared pool. Systems can draw capacity from this pool as workload demands increase. Samsung further displayed processing-in-memory technology, which performs some calculations inside memory chips to reduce data movement and lower energy consumption. The exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Early Co-Design Efforts Influence Samsung’s AI Memory Strategy
Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, discussed the company’s plans during an executive session. He emphasized that larger AI models and increased inference demand make higher memory capacity and bandwidth essential for optimal system performance. Shim also explained that Samsung is expanding co-design and technical validation collaborations with global partners from the earliest stages of development. The goal is to better align its memory and storage products with customer system designs.
Samsung MAX Lab offers clients a space to evaluate memory and storage solutions under real-world AI workloads. The lab also provides co-design services tailored to specific system configurations. Customers can test pre-commercial technologies, including PIM and next-generation SSDs, before they are released to the market. Samsung participated in the summit as a Diamond Sponsor. This event follows its appearances in 2026 at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, as the company continues to expand its presence in AI memory advancements.